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4140B HP Semiconductor Parameter Analyzer
Additional Features: Display: 3.5 Digit Basic Accuracy: 0.5% Measurement time: 4ms-2.56s Consists of an extremely stable picoampere meter and two programmable DC Voltage sources, one of which operates as a ramp and staircase generator as well as a DC Source. Ideal for making DC characteristic measurements such as leakage current, current-voltage characteristics and quasi-static C-V measurements required by the semiconductor industry for new product development and for improving production yields The two voltage sources have ranges of ±100 V The Agilent 4140B pA Meter / DC Voltage Source consists of an extremely stable picoampere meter and two programmable DC voltage sources, one of which operates as a ramp and staircase generator as well as a DC source. These features make the unit ideal for making DC characteristic measurements such as leakage current, current-voltage characteristics and quasi-static C-V measurements required by the semiconductor industry for new product development and for improving production yields. It is equally useful in measurements of electronic components and materials to determine leakage currents or insulation resistances.
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4140B HP Semiconductor Parameter Analyzer
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Additional Features: Display: 3.5 Digit Basic Accuracy: 0.5% Measurement time: 4ms-2.56s Consists of an extremely stable picoampere meter and two programmable DC Voltage sources, one of which operates as a ramp and staircase generator as well as a DC Source. Ideal for making DC characteristic measurements such as leakage current, current-voltage characteristics and quasi-static C-V measurements required by the semiconductor industry for new product development and for improving production yields The two voltage sources have ranges of ±100 V The Agilent 4140B pA Meter / DC Voltage Source consists of an extremely stable picoampere meter and two programmable DC voltage sources, one of which operates as a ramp and staircase generator as well as a DC source. These features make the unit ideal for making DC characteristic measurements such as leakage current, current-voltage characteristics and quasi-static C-V measurements required by the semiconductor industry for new product development and for improving production yields. It is equally useful in measurements of electronic components and materials to determine leakage currents or insulation resistances.
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